The Defense Systems Information Analysis Center (DSIAC) is searching for organometallic compounds most often used in depositing tungsten, cobalt, or ruthenium to fabricate low-resistance source/drain contacts in transistor research. Of particular interest are deposition approaches for fin field-effect transistors or gate-all-around transistor designs.
If you are willing to assist in this effort or know of someone who might be willing to assist, please provide contact information and details in the form (here) or in an e-mail to Daniel Fleming (daniel.p.fleming8.ctr@mail.mil), the lead DSIAC analyst for this effort.