Which organometallic compounds are most often used for depositing tungsten, cobalt, or ruthenium in semiconductor transistors?

electronic components on a circuit board
Source: Royalty free Pixabay image.

Posted: April 29, 2024

Deadline: April 26, 2024

The Defense Systems Information Analysis Center (DSIAC) is searching for organometallic compounds most often used in depositing tungsten, cobalt, or ruthenium to fabricate low-resistance source/drain contacts in transistor research. Of particular interest are deposition approaches for fin field-effect transistors or gate-all-around transistor designs.

If you are willing to assist in this effort or know of someone who might be willing to assist, please provide contact information and details in the form (here) or in an e-mail to Daniel Fleming (daniel.p.fleming8.ctr@mail.mil), the lead DSIAC analyst for this effort.

This inquiry has been completed.

We are no longer soliciting new feedback.

Want to find out more about this topic?

Request a FREE Technical Inquiry!

Focus Areas